Title
XXX1 and YYY1*
1 Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia
Abstract
Sputtered pure metallic samarium films on silicon were thermal oxynitrided in nitrous oxide ambient at various temperatures (600 – 900°C) for 15 min. The effects of thermal oxynitridation temperature on the electrical properties of produced thin film were systematically reported. The sample oxynitrided at 700 °C demonstrated the highest electrical breakdown field of 3.9 MV cm-1 at the lowest leakage current density of 10-7 A cm-2. This is attributed to the lowest effective oxide charge, interface trap density, and total interface trap density. The Fowler-Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 6.33 eV.
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