XXX1 and YYY1*

1 Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia

*Email: abc@um.edu.my


Sputtered pure metallic samarium films on silicon were thermal oxynitrided in nitrous oxide ambient at various temperatures (600 – 900°C) for 15 min. The effects of thermal oxynitridation temperature on the electrical properties of produced thin film were systematically reported. The sample oxynitrided at 700 °C demonstrated the highest electrical breakdown field of 3.9 MV cm-1 at the lowest leakage current density of 10-7 A cm-2. This is attributed to the lowest effective oxide charge, interface trap density, and total interface trap density. The Fowler-Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 6.33 eV.

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